Irradiation induced changes in small angle grain boundaries in mosaic Cu thin films
نویسندگان
چکیده
منابع مشابه
Grain Growth Mechanism of Cu Thin Films
Since Cu was found to be attractive as interconnect materials for ultra-large scale integrated (ULSI) Si devices, the electrical properties of Cu films have been extensively studied to prepare low resistance films. It was found in our previous papers that reduction of the electrical resistance of the Cu films was achieved by increasing grain sizes of the Cu films and large-grained Cu films were...
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ژورنال
عنوان ژورنال: Applied Physics A
سال: 2012
ISSN: 0947-8396,1432-0630
DOI: 10.1007/s00339-012-6865-y